Journal
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 15, Issue 37, Pages L591-L596Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/15/37/L06
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Optical absorption measurements on different growth sectors of a polished slice of electron-irradiated type Ib synthetic diamond show that the vacancy concentration is almost four times higher in the high-nitrogen {111} sectors than in the low-nitrogen {115} sectors. Evidence is presented to show that the self-interstitials are trapped by nitrogen, thereby reducing the amount of correlated recombination with vacancies which occurs in the absence of nitrogen.
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