4.4 Article

Monitoring stress in thin films during processing

Journal

SURFACE ENGINEERING
Volume 19, Issue 5, Pages 387-391

Publisher

MANEY PUBLISHING
DOI: 10.1179/026708403225010118

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Wafer curvature measurements are a simple yet sensitive way to measure stress in thin films. A inultibeam optical system designed for in situ monitoring makes it possible to monitor the evolution of thin film stress in real time in a variety of deposition and processing environments. Examples of stress measurements in epitaxial systems, polycrystalline films and hard coatings are discussed.

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