A new method for pHEMT noise-parameter determination based on 50-Ω noise measurement system

A new method for determining the four noise parameters of pseudomorphic high electron-mobility transistors (pHEMT) based on 50-Omega noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 26 GHz is presented and a comparison with a tuner-based method is given. The scaling rules for noise parameters have also been determined. Good agreement is obtained between simulated and measured results for 2 x 20 mum, 2 x 40 mum, and 2 x 60 mum gatewidth (number of gate fingers x unit gatewidth) 0.25-mum double-heterojunction delta-doped pHEMTs.