Low-pressure metal-organic CVD of transparent and p-type conducting CuCrO2 thin films with high conductivity

Communication: The growth of CuCrO2 films on glass substrate by LP-MOCVD is reported. Unlike nearly all transparent conducting oxides which exhibit only n-type conductivity, CuCrO2 crystalline thin films deposited from Cu(acac)(2) and Cr(acac)(3) precursors exhibit positive Hall co-efficient with the highest carrier Hall mobility reported to date for any p-type transparent conducting oxide based on Cu-delafossite structure. The deposition, performed at 823 K, grows at a rate of 13 nm min(-1). XRD analysis indicates diffraction peaks corresponding to the (101), (012), (104), and (110) planes. The direct optical bandgap is calculated to be 3.08 eV.