Journal
SOLID-STATE ELECTRONICS
Volume 47, Issue 10, Pages 1713-1718Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1101(03)00133-3
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In this study the influence of low energy hydrocarbon ion irradiation at a glancing angle on electronic propel-ties of the GaAs surface and Al-GaAs interface was investigated. The formation of a thin carbon enriched multiphase layer on the GaAs surface was observed. Despite this, reduction of the low-frequency noise, (especially at low temperatures), and effective barrier height of Schottky contacts were achieved at irradiation doses greater than or equal to 10(15) ion/cm(2). The obtained results are explained by the homogenization of the current flow through the Al-GaAs Schottky contact interface layer. (C) 2003 Elsevier Ltd. All rights reserved.
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