Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 7, Issue 31, Pages 17425-17432Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b04815
Keywords
Cu(In,Ga)Se-2; Zn(O,S); bottom cell; thermal annealing depth profiling energy band alignment
Funding
- Ministry of Science, ICT and Future Planning (MSIP)
- Korea Research Council for Industrial Science and Technology (ISTK)
- Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Ministry of Trade, Industry, and Energy, Republic of Korea [20123030010030, 20153010011990]
- Technology Innovation Program - Ministry of Trade, Industry, and Energy (MOTIE) [10047001]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20123030010030, 20153010011990] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We selected a sputtered-Zn(O,S) film as a buffer material and fabricated a Cu(In,Ga)Se-2 (CIGS) solar cell for use in monolithic tandem solar cells. A thermally stable buffer layer was required because it should withstand heat treatment during processing of top cell. Postannealing treatment was performed on a CIGS solar cell in vacuum at temperatures from 300-500 degrees C to examine its thermal stability. Serious device degradation particularly in V-OC was observed, which was due to the diffusion of thermally activated constituent elements. The elements In and Ga tend to out-diffuse to the top surface of the CIGS, while Zn diffuses into the interface of Zn(0,S)/CIGS. Such rearrangement of atomic fractions modifies the local energy band gap and band alignment at the interface. The notch-shape induced at the interface after postannealing could function as an electrical trap during electron transport, which would result in the reduction of solar cell efficiency.
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