Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume 42, Issue 10A, Pages L1109-L1111Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.42.L1109
Keywords
single-electron turnstile; single-electron transistor; silicon-on-insulator; nanotechnology; current standard
Categories
Ask authors/readers for more resources
A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate independently controls the closing and opening of the channel acting as the SET lead, which enables single-electron transfer synchronized with ac gate biases. By applying ac biases to the dual gates with a frequency f of similar to1 MHz and a phase shift of pi, current staircases quantized in units of ef are observed in drain current vs drain voltage characteristics at 25 K.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available