4.5 Article

InGaAs-AlAs-AlAsSb coupled quantum well intersubband transition all-optical switch with low switching energy for OTDM systems

Journal

IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 15, Issue 10, Pages 1363-1365

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2003.818045

Keywords

absorption saturation; coupled double quantum well (C-DQW); intersubband transition (ISB-T)

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We report a novel intersubband transition all-optical switch with low switching energy using InGaAs-AlAs-AlAsSb coupled double quantum wells (C-DQWs) with AlAs spacer layers. Very low saturation energy density of 34 fJ/mum(2) was observed for bulk transmittance with wavelength of 1.62 mum. Using a waveguide, whose core is 93 periods of the C-DQWs, an all optical switch with a low switching energy of 10 pJ for 10-dB extinction ratio was realized.

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