Journal
SURFACE SCIENCE
Volume 543, Issue 1-3, Pages 87-94Publisher
ELSEVIER
DOI: 10.1016/j.susc.2003.07.005
Keywords
synchrotron radiation photoelectron spectroscopy; surface electronic phenomena (work function; surface potential, surface states, etc.); silicon; silicon oxides
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Combined laser and synchrotron radiation (SR) photoelectron spectroscopy with a temporal resolution of 60 ps has been applied to study the relaxation of the surface photovoltage (SPV) after laser pulse excitation for a SiO2/Si(1 0 0) interface. For zero time delay between laser and SR pulses the SR 2p core level exhibits an initial spectral shift of 300 meV which relaxes non-exponentially to about 100 meV after 800 ns. The relaxation of the SPV can be modeled using a self-decelerating carrier relaxation based on a thermionic emission model. (C) 2003 Elsevier B.V. All rights reserved.
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