Journal
APPLIED PHYSICS LETTERS
Volume 83, Issue 15, Pages 3075-3077Publisher
AIP Publishing
DOI: 10.1063/1.1618379
Keywords
-
Categories
Ask authors/readers for more resources
We have investigated the growth mechanisms of group-III nitrides on c-plane sapphire substrates with experiments by pulsed-laser deposition and first-principles calculations. It has been experimentally revealed that the in-plane alignment between the nitrides and sapphire is [10-10]nitride//[11-20]sapphire and the nitride films have the N polarity for the most cases. We have found that the insertion of an Al-rich AlN buffer layer effectively turns over the GaN crystals from the N polarity to the Ga polarity, although the Ga-rich GaN buffer layer does not cause change in the polarity. The theoretical energy calculations of a sapphire slab with an adatom explain the experimental results, such as the in-plane alignment and the polarity change, quite well. (C) 2003 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available