Interaction corrections to two-dimensional hole transport in the large-rs limit -: art. no. 165308

The metallic conductivity of dilute two-dimensional holes in a GaAs heterojunction insulated-gate field-effect transistor with extremely high mobility and large r(s) is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter F-0(sigma) determined from the experiment, however, decreases with increasing r(s) for r(s)greater than or similar to22, a behavior unexpected from theoretical calculations valid for small r(s).