Journal
APPLIED PHYSICS LETTERS
Volume 83, Issue 16, Pages 3293-3295Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1619210
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The effect of low-energy electron-beam irradiation (LEEBI) on native defects and residual impurities in metalorganic-vapor-phase-epitaxy-grown, lightly Mg-doped, p-type GaN was studied by temperature-resolved and excitation power density-resolved cathodoluminescence spectroscopy. Following the LEEBI treatment, the ubiquitous shallow donor-acceptor-pair emission at 3.27 eV decreased, while a deeper DAP emission at similar to3.1 eV dramatically increased in intensity, and a broad yellow luminescence band centered at 2.2 eV evolved. The results clearly indicate that the centers involved in the 3.27 eV transition are not stable during irradiation by low-energy electrons. Further, we report that the LEEBI-treatment not only dissociates neutral Mg-H complexes as intended, but simultaneously dissociates other hydrogenated defect complexes, giving rise to additional radiative recombination channels. (C) 2003 American Institute of Physics.
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