Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 36, Issue 20, Pages L105-L107Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/36/20/L02
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A ZnO transparent thin-film transistor (TTFT) with a channel layer formed via spin-coating deposition is demonstrated. The TTFT is highly transparent and exhibits n-channel, enhancement-mode behaviour with a channel mobility as large as 0.20 cm(2) V-1 s(-1) and a drain current on-to-off ratio of nearly 10(7).
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