Journal
PHYSICAL REVIEW LETTERS
Volume 91, Issue 17, Pages -Publisher
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.91.176102
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The initial surface roughening during Ge epitaxy on Si(001) is shown to arise from an effective repulsion between S-A surface steps and dimer vacancy lines (VLs). This step-VL interaction gradually inactivates a substantial fraction of adatom attachment sites at the growth front, causing a rapid increase in the rate of two-dimensional island nucleation. The mutual repulsion hinders the crossing of S-A surface steps over VLs in the second layer, thus organizing the developing surface roughness into a periodic array of anisotropic 2D terraces. Isolated (105) facets forming at specific sites on this ordered template mediate the assembly of first 3D Ge islands.
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