Journal
OPTICS LETTERS
Volume 28, Issue 22, Pages 2189-2191Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.28.002189
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Asymmetric multiple-quantum-well laser diodes with wide and flat gain spectra were designed, fabricated, and analyzed. The active layer was composed, of three 10-nm, one 8-nm, and two 6-nm 0.5% compressive strained wells and four 10-nm and one 5-nm 0.4% tensile strained barrier layer. Measured spectra of antireflection-coated ridge waveguide laser diodes with such quantum-well structures have shown that -1-dB spectral gain bandwidth can be as large as 90 nm. (C) 2003 Optical Society of America.
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