Field-effect transistors on tetracene single crystals

We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of 0.4 cm(2)/V s. The nonmonotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the sharpness of the subthreshold slope, confirm the high quality of single-crystal devices. This is due to the fabrication process that does not substantially affect the crystal quality. (C) 2003 American Institute of Physics.