Journal
ELECTRONICS LETTERS
Volume 39, Issue 24, Pages 1749-1750Publisher
IEE-INST ELEC ENG
DOI: 10.1049/el:20031116
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A new photodiode design that combines depleted and neutral absorption layers to minimise carrier travelling delay time for a given total absorption layer thickness is proposed. The fabricated photodiode has a thick (0.8 pm) InGaAs absorption layer and achieves a responsivity of 0.98 A/W at lambda = 1.55 mum while still maintaining a high bandwidth of 50 GHz.
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