Journal
JOURNAL OF COMPUTATIONAL ELECTRONICS
Volume 2, Issue 2-4, Pages 113-117Publisher
SPRINGER
DOI: 10.1023/B:JCEL.0000011409.76632.70
Keywords
quantum thermodynamics; effective potentials
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We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential. We study the quantum interaction of electrons with a gate oxide barrier potential in a 25 nm MOSFET.
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