Journal
JOURNAL OF APPLIED PHYSICS
Volume 94, Issue 11, Pages 7155-7158Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1625579
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Photoemission spectroscopy has been used to observe the interface electronic states as HfO2 was deposited on clean n-type Ga-face GaN (0001) surfaces. The HfO2 was formed by repeated deposition of several monolayers of Hf followed by remote plasma oxidation at 300degreesC, and a 650degreesC densification anneal. The 650degreesC anneal resulted in a 0.6 and 0.4 eV change in band bending and valence band offset, respectively. The final annealed GaN/HfO2 interface exhibited a valence band offset of 0.3 eV and a conduction band offset of 2.1 eV. A 2.0 eV deviation was found from the electron affinity band offset model. (C) 2003 American Institute of Physics.
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