Resistive switching in metal-ferroelectric-metal junctions

The aim of this work is to investigate the electron transport through metal-ferroelectric-metal (MFM) junctions with ultrathin barriers in order to determine its dependence on the polarization state of the barrier. To that end, heteroepitaxial Pt/Pb(Zr0.52Ti0.48)O-3/SrRuO3 junctions have been fabricated on lattice-matched SrTiO3 substrates. The current-voltage (I-V) characteristics of the MFM junctions involving a few-nanometer-thick Pb(Zr0.52Ti0.48)O-3 barriers have been recorded at temperatures between 4.2 K and 300 K. Typical I-V curves exhibit reproducible switching events at well-defined electric fields. The mechanism of charge transport through ultrathin barriers and the origin of the observed resistive switching effect are discussed. (C) 2003 American Institute of Physics.