Journal
PHYSICAL REVIEW B
Volume 68, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.68.233301
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We present an experimental and theoretical study of the existence of acoustic phonon sidebands in the emission line of single self-assembled InAs/GaAs quantum dots. Temperature-dependent photoluminescence measurements reveal a deviation from a Lorentzian profile with the appearance of lateral sidebands. We obtain an excellent agreement with calculations done in the framework of the Huang-Rhys formalism. We conclude that the only relevant parameter for the observation of acoustic phonon sidebands is the linewidth of the central zero-phonon line. At high temperature, the quasi-Lorentzian quantum dot line appears to be fully determined by the acoustic phonon sidebands.
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