Electrical-field control of metal-insulator transition at room temperature in Pb(Zr0.2Ti0.8)O3/La1-xBaxMnO3 field-effect transistor

We have constructed field-effect transistor structures that consist of a ferromagnetic (La,Ba)MnO3 channel and a ferroelectric PbZr0.2Ti0.8O3 gate insulator with the aim of controlling the metal-insulator transition at room temperature by applying an electric field. Investigations have revealed that the transition temperature changed from 237.0 K to 242.0 K for the La0.90Ba0.10MnO3 channel layer by ferroelectric remnant polarity (+/-50 muC/cm(2)) and from 280.5 K to 283.0 K (+/-26 muC/cm(2)) for the La0.85Ba0.15MnO3 channel layer. These shifts, which are linearly proportional to the magnitude of ferroelectric remnant polarization, are induced by the accumulation charge due to the electric field. (C) 2003 American Institute of Physics.