Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy

Single crystalline InN films with an absorption edge between 0.7 and 2 eV have been grown using a variety of different techniques including; conventional metal-organic vapor-phase epitaxy (MOVPE), ArF-laser assisted MOVPE (pa-MBE), and plasma-assisted molecular-beam epitaxy. Analysis of samples grown using different methods has led to important evidence for determining the actual band gap energy of InN. In an effort to find the origin of the change in absorption edge, this evaluation was focused on the la-MOVPE of InN. This deposition technique enables InN film deposition over a wide range of growth temperatures, ranging from room temperature to a very high temperature (700degreesC). Characterization of InN films grown over a wide range of temperatures strongly suggests that oxygen contamination leads to a larger band gap absorption energy value than the actual value, even in the case of single crystalline films. In films grown at low temperatures, oxygen appeared to form an alloy, resulting in a larger absorption edge, whereas, in films grown at high temperatures oxygen was present as a donor, which resulted in a larger absorption edge due to a Burstein-Moss shift. (C) 2003 American Institute of Physics.