Magnetic and transport properties of the V2-VI3 diluted magnetic semiconductor Sb2-xMnxTe3

We have measured electrical and magnetic properties of single crystals of Sb2-xMnxTe3 with x=0-0.045 at temperatures of 2 K to 300 K. Hall effect measurements indicate that each manganese atom donates approximately one hole to the valence band. The magnetic susceptibility is paramagnetic down to 2 K, and both Curie-Weiss and Brillouin analyses show that manganese substitutes for Sb and takes the Mn2+ state with S=5/2. Contrary to the case of III-V host matrices, manganese does not stimulate ferromagnetic order in the family of bulk layered V-2-VI3 diluted magnetic semiconductors, at least in the range of magnetic impurity and carrier concentrations studied here. (C) 2003 American Institute of Physics.