Journal
APPLIED PHYSICS LETTERS
Volume 83, Issue 24, Pages 4906-4908Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1633672
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The internal quantum efficiency (IQE) of highly-efficient near-UV light-emitting diodes, which shows an external quantum efficiency of 43% at 406 nm, has been measured by excitation power and temperature-dependent photoluminescence (PL). Assuming peak PL quantum efficiency at 8 K is 100%, peak IQE at 300 K was measured to be as high as 63%. At the injected carrier density, which corresponds to 20 mA current injection, IQE and light extraction efficiency were estimated to be about 54% and 80%, respectively. (C) 2003 American Institute of Physics.
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