Journal
ADVANCED MATERIALS
Volume 16, Issue 1, Pages 87-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200305729
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Electrolurninescent (EL) devices (see Figure) have been fabricated using n-ZnO nanorod arrays grown on p-GaN epilayers. Simple heteroepitaxial growth yields vertically aligned ZnO nanorods with an abrupt interface on GaN. The p-n heterojunction EL device shows a high current density and strong electroluminescence even at a reverse-bias voltage of 3 V.
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