Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume 43, Issue 1A-B, Pages L44-L46Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.43.L44
Keywords
MRAM; magnetic tunnel junction; negative differential resistance; tunneling magnetoresistance; tunnel diode
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A novel magnetic random access memory (MRAM) cell consisting of a magnetic tunnel junction (MTJ) and a tunnel diode connected in series is described. The negative differential resistance (NDR) characteristics of the tunnel diode were used to increase the tunneling magnetoresistance (TMR) ratio of the MTJ. The basic operation was successfully confirmed by both simulation and experiment. The fabricated circuit showed that the effective MR ratio was enhanced from its original value of 15 to 890%. In the simulation, a sufficient operating margin of the bias voltage was obtained by using the MTJ with its TMR ratio of 30%.
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