Journal
ADVANCED MATERIALS
Volume 16, Issue 2, Pages 118-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200305731
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The layer-by-layer adsorption of precursor metal alkoxides in solution and post-annealing at 400degreesC affords an alternate technique to the atomic layer chemical vapour deposition method for fabrication of next-generation high-kappa gate dielectrics. A void-free TiO2-La2O3 composite film (see Figure) with 18 nm thickness is readily fabricated, and shows a dielectric constant higher than 30.
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