Solution-based fabrication of high-k gate dielectrics for next-generation metal-oxide semiconductor transistors

The layer-by-layer adsorption of precursor metal alkoxides in solution and post-annealing at 400degreesC affords an alternate technique to the atomic layer chemical vapour deposition method for fabrication of next-generation high-kappa gate dielectrics. A void-free TiO2-La2O3 composite film (see Figure) with 18 nm thickness is readily fabricated, and shows a dielectric constant higher than 30.