Journal
THIN SOLID FILMS
Volume 447, Issue -, Pages 489-492Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2003.09.002
Keywords
InAs/GaSb superlattices; photodiodes; surface passivation; type II; infrared detector
Ask authors/readers for more resources
Recently, excellent infrared detectors have been demonstrated using Type II InAs/GaSb superlattice materials sensitive at wavelengths from 3 mum to greater than 32 mum. These results indicate that Type II superlattice devices may challenge the preponderance of HgCdTe and other state-of-the-art infrared material systems. As such, surface passivation is becoming an increasingly important issue as progress is made towards the commercialization of Type II devices and focal plane array applications. This work focuses on initial attempts at surface passivation of Type II InAs/GaSb superlattice photodiodes using PECVD-grown thin layers of SiO2. Our results indicate that silicon dioxide coatings deposited at various temperatures improve photodetector resistivity by several times. Furthermore, reverse-bias dark current has been reduced significantly in passivated devices. (C) 2003 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available