Journal
PHYSICAL REVIEW B
Volume 69, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.69.081309
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Scanning tunneling spectroscopy is used to study p-type Ge(111)c(2x8) surfaces at temperatures between 7 and 61 K and over a wide range of tunnel currents. The spectral feature arising from Ge rest atoms is found to shift in voltage with increasing tunnel current. A comparison of the current dependence of the results with electrostatic computations of tip-induced band bending yields poor agreement. A model is discussed in which the observed shift in the rest-atom state arises from an accumulation of nonequilibrium carriers at the surface.
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