4.8 Article

Highly Transparent and Flexible Triboelectric Nanogenerators with Subwavelength-Architectured Polydimethylsiloxane by a Nanoporous Anodic Aluminum Oxide Template

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 7, Issue 37, Pages 20520-20529

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b05842

Keywords

transparency; triboelectric nanogenerators; subwavelength architectured PDMS; anodic aluminum oxide

Funding

  1. National Research Foundation of Korea (NRF) grant - Korean government (MSIP) [2014-069441]
  2. National Research Foundation of Korea [22A20130012188, 2013R1A2A2A01068407] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Highly transparent and flexible triboelectric nanogenerators (TENGs) were fabricated using the sub-wavelength-architectured (SWA) polydimethylsiloxane (PDMS) with a nanoporous anodic aluminum oxide (AAO) template as a replica mold. The SWA PDMS could be utilized as a multifunctional film for a triboelectric layer, an antireflection coating, and a self-cleaning surface. The nanopore arrays of AAO were formed by a simple, fast, and cost-effective electrochemical oxidation process of aluminum, which is relatively impressive for fabrication of the TENG device. For electrical contacts, the SWA PDMS was laminated on the indium tin oxide (ITO)-coated polyethylene terephthalate (PET) as a bottom electrode, and the bare ITO-coated PET (i.e., ITO/PET) was used for the top electrode. Compared to the ITO/PET, the SWA PDMS on the ITO/PET improved the transmittance from 80.5 to 83% in the visible wavelength region and also had high transmittances of >85% at wavelengths of 430-455 nm. The SWA PDMS also exhibited the hydrophobic surface with a water contact angle (theta(CA)) of similar to 115 degrees which can be useful for self-cleaning applications. The average transmittance (T-avg) of the entire TENG device was observed to be similar to 70% over a broad wavelength range. At an external pushing frequency of 0.5 Hz, for the TENG device with the ITO top electrode, open-circuit voltage (V-OC) and short-circuit current (I-SC) values of similar to 3.8 V and similar to 0.8 mu A were obtained instantaneously, respectively, which were higher than those (i.e., V-OC approximate to 2.2 V, and I-SC approximate to 0.4 mu A) of the TENG device with a gold top electrode. The effect of external pushing force and frequency on the output device performance of the TENGs was investigated, including the device robustness. A theoretical optical analysis of SWA PDMS was also performed.

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