Thermodynamic study of c-axis-oriented epitaxial Pb(Zr,Ti)O3 thin films -: art. no. 064103

Thermodynamic characteristics of single crystalline Pb(Zr0.52Ti0.48)O-3 (PZT) were investigated using c-axis oriented PZT films. The PZT films were epitaxially grown on Pt/MgO substrate and dielectric and ferroelectric properties were measured as a function of one-dimensional stress. The stress dependence of dielectric and ferroelectric properties was examined on the basis of the Landau-Devonshire's phenomenological theory and the free energy coefficients of single crystalline PZT films were obtained. The dielectric stiffness coefficients and electrostrictive coefficient of epitaxial PZT films were obtained to be alpha(1)=-1.30x10(8) (m/F), alpha(11)=3.07x10(8) (m(5)/(CF)-F-2), alpha(111)=-3.11x10(7) (m(9)/(CF)-F-2), and Q(12)=-5.70x10(-2) (m(4)/C-2), which are different from the values derived from the analysis of polycrystalline PZT. The temperature dependence of dielectric constant of the PZT films showed clear Curie-Weiss law and the dielectric stiffness coefficient alpha(1) derived from this measurement was almost same value from the analysis of stress dependence of the dielectricity of the epitaxial PZT films.