Journal
DIAMOND AND RELATED MATERIALS
Volume 13, Issue 2, Pages 266-269Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2003.11.001
Keywords
diamond film; nanodiamond precursor; Raman scattering; SFM; nanoindentation
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In this work, structure and mechanical properties of diamond films fabricated by HFCVD on silicon substrates with nanodiamond seeding were investigated. Raman spectroscopy was used to characterise the diamond phase content, crystalline quality and source of stresses in these films. Topography, hardness and Young's modulus were studied by scanning force microscopy (SFM) and nanoindentation methods. It has been ascertained that for the diamond films grown on silicon substrates with nanodiamond seeding hardness and crystalline quality is higher than for films on scratched silicon. The diamond films demonstrate Raman upshift with respect to natural diamond, indicating presence of internal compressive stress. It was shown that various types of impurities and defects induce compressive stresses in the diamond grains. (C) 2003 Elsevier B.V. All rights reserved.
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