Journal
APPLIED PHYSICS LETTERS
Volume 84, Issue 8, Pages 1248-1250Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1650550
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We report AlGaN-based back-illuminated solar-blind ultraviolet p-i-n photodetectors with a peak responsivity of 136 mA/W at 282 nm without bias. This corresponds to a high external quantum efficiency of 60%, which improves to a value as high as 72% under 5 V reverse bias. We attribute the high performance of these devices to the use of a very-high quality AlN and Al0.87Ga0.13N/AlN superlattice material and a highly conductive Si-In co-doped Al0.5Ga0.5N layer. (C) 2004 American Institute of Physics.
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