Journal
APPLIED PHYSICS LETTERS
Volume 84, Issue 8, Pages 1305-1307Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1645984
Keywords
-
Categories
Ask authors/readers for more resources
The chemical states of the HfO2/Si (100) interface were investigated using transmission electron microscopy and high-resolution x-ray photoelectron spectroscopy. The depth distributions of Hf chemical states showed that the Hf 4f binding energy remains unchanged with the depth and there is no signature of more than one Hf-O state. These facts strongly suggest that the chemical state of the interfacial layer is not Hf-silicate, as previously believed. Instead, the compositions are mainly Si2O3 and SiO2, judging from the deconvolution of Si 2p spectra. The dielectric constant kappa=4.8 of the interfacial layer is also consistent with the above conclusions. (C) 2004 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available