Confinement effects and surface-induced charge carriers in Bi quantum wires

We present measurements of Shubnikov-de Haas oscillations in arrays of bismuth nanowires. For 80 nm wires, the hole concentration is less than 30% that of bulk Bi, a finding that is consistent with current models of quantum confinement effects. However, 30-nm-diam nanowires which are predicted to be semiconductors show a nearly isotropic short period of 0.025 T-1, consistent with a heavy carrier concentration five times that of bulk Bi. These results are discussed in terms of surface-induced charge carriers in a spherical Fermi surface pocket that are uniformly distributed in the 30 nm nanowire volume and that inhibit the semimetal-to-semiconductor transition. (C) 2004 American Institute of Physics.