Journal
PHYSICAL REVIEW LETTERS
Volume 92, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.92.086602
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We propose to use the lateral interface between two regions with different strengths of the spin-orbit interaction(s) to spin polarize the electrons in gated two-dimensional semiconductor heterostructures. For a beam with a nonzero angle of incidence, the transmitted electrons will split into two spin polarization components propagating at different angles. We analyze the refraction at such an interface and outline the basic schemes for filtration and control of the electron spin.
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