Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 21, Issue 2-4, Pages 966-969Publisher
ELSEVIER
DOI: 10.1016/j.physe.2003.11.172
Keywords
(GaMn)As; tunneling magnetoresistance; spin polarization
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We have investigated the properties of tunneling magnetoresistance (TMR) of (Ga,Mn)As trilayer structures with a GaAs intermediary barrier layer. TMR ratio of 290% is observed at 0.39 K around zero applied bias voltage. The bias dependence of TMR ratio as well as the temperature-dependent anisotropic behavior are presented. (C) 2003 Elsevier B.V. All rights reserved.
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