Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(11(2)over-bar0) 4H-SiC interface

Nitric oxide postoxidation anneal results in a significant decrease of defect state density (D-it) near the conduction bandedge of n-4H-SiC at the oxide/(11(2) over bar 0) 4H-SiC interface. Comparison with measurements on the conventional (0001) Si-terminated face shows a similar interface state density following passivation. Medium energy ion scattering provides a quantitative measure of nitrogen incorporation at the SiO2/SiC interface. (C) 2004 American Institute of Physics.