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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume 43, Issue 3, Pages 976-979Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.43.976
Keywords
ohmic contact; ZnO; specific contact resistivity; interfacial reaction; auger electron spectroscopy; x-ray photoelectron spectroscopy
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The mechanism of Al ohmic contacts to n-type zinc oxide (ZnO:Al) epitaxial layer was investigated. The formation of an Al-ZnO interfacial phase at room temperature was responsible for the low specific resistivity (8 +/- 0.3 x 10(-4) Omegacm(2)). The results of Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) depth profiles, and glancing angle X-ray diffraction (GXRD) indicate that an interfacial reaction between Al and ZnO results in an increased doping concentration in the region of the ZnO surface resulting in a low specific contact resistivity without the need for a thermal annealing process.
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