4.6 Article

Anomalous charge transport behavior of Fullerene based diodes

Journal

APPLIED PHYSICS LETTERS
Volume 84, Issue 9, Pages 1570-1572

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.1651642

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We observed an anomalous voltage-current (V-I) characteristics of fullerene based diodes in the low temperature regime. The diodes exhibit a negative differential resistance and voltage hysteresis for opposite current sweep directions. This behavior is directly observable at temperatures below 95 K and indicates the formation of highly conductive filaments in the fullerene thin films. (C) 2004 American Institute of Physics.

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