Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 21, Issue 2-4, Pages 1032-1036Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physe.2003.11.165
Keywords
ferromagnetic semiconductors; magnetoresistance; weak localization; magnetic anisotropy; (GaMn)As
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Hall and sheet resistance of 200-nm thick metallic (Ga,Mn)As with compressive and tensile strain has been measured as a function of the magnetic field and temperature. The magnitude of resistance is found to depend rather strongly on relative orientations of magnetization and current and their directions in respect to crystal axes, the configuration corresponding to the highest resistance being different for compressive and tensile strain. Negative magnetoresistance, which is observed even if magnetization becomes saturated, is assigned to weak localization. (C) 2003 Elsevier B.V. All rights reserved.
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