An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs

A new solution to account for the quantum mechanical effects (QME) in an explicit surface-potential-based MOSFET model is presented. The inclusion of QME is achieved using a variational approach to the solution of the Schrodinger and Poisson equations. The resulting physics-based model is fully analytical and suitable for the simulation of deep-submicron MOSFETs, with highly doped substrates and ultra-thin gate oxide thicknesses. It gives an accurate and continuous description of the surface potential and its derivatives from depletion to strong inversion region. An important point is that the model is developed for a MOSFET device, and not only for a MOS capacitor, so it is fully dependent on all terminal voltages. The quantum explicit surface potential model leads to excellent results in comparison with full QM self-consistent calculations (coupled Schrodinger-Poisson simulations) for a large range of substrate doping and oxide thickness. Comparisons with experimental data from various deep-submicron CMOS technologies show accurate fits for both I-V and C V characteristics. (C) 2003 Elsevier Ltd. All rights reserved.