Journal
IEEE ELECTRON DEVICE LETTERS
Volume 25, Issue 3, Pages 117-119Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2003.822667
Keywords
field plate; GaN; high-electron-mobility-transistors (HEMT); microwave power
Categories
Ask authors/readers for more resources
GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance. Great enhancement in radio frequency (RF) current-voltage swings was achieved with acceptable compromise in gain, through both reduction in the trapping effect and increase in breakdown voltages. When biased at 120 V, a continuous wave output power density of 32.2 W/mm and power-added efficiency (PAE) of 54.8% at 4 GHz were obtained using devices with dimensions of 0.55 x 246 mum(2) and a field-plate length of 1.1 mum. Devices with a shorter field plate of 0.9 mum also generated 30.6 W/mm with 49.6% PAE at 8 GHz. Such ultrahigh power densities are a dramatic improvement over the 10-12 W/mm values attained by conventional gate GaN-based HEMTs.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available