Properties of vanadium-doped SrBi4Ti4O15 ferroelectric ceramics

Using the standard solid-state reaction method, several vanadium-doped ferroelectric ceramics of type SrBi4-x/3Ti4-xVxO15 (SBTV - x) were synthesized. The vanadium doping content, x, rungs from 0.00 to 0.06. The crystal structure of SrBi4Ti4O15 is not affected by V-doping. The electric breakdown voltage of the samples increases with V content. Meanwhile, V-doping results in a notable enlargement of remnant polarization (2P(r)). The 2P(r) of STBV - 0.03 reaches a very large value, which is over 50 muC/cm(2) and is nearly twice greater than that at zero doping. The Curie temperatures of V-doped samples decrease slightly in comparison with that of SrBi4Ti4O15. V-doping can improve the electric properties of SrBi4Ti4O15 without sacrificing its thermal stableness. (C) 2003 Elsevier Ltd. All rights reserved.