4.8 Article

Novel electronic structure of inhomogeneous quantum wires on a Si surface

Journal

PHYSICAL REVIEW LETTERS
Volume 92, Issue 9, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.92.096801

Keywords

-

Ask authors/readers for more resources

A one-dimensional system of Si(111)-(5x2)-Au is explored using scanning tunneling microscopy and spectroscopy. The chain of Si adatoms called bright protrusions (BP's) is found to be semiconducting with an evanescent state in the gap, which originates from adjoining metallic BP-free segments. A quantitative analysis shows that the evanescent state decays in inverse-Gaussian form, leading to an appearance of a parabolic BP chain, and scales to its chain length. Spatial decay of the state suggests a quadratic band bending and the existence of a Schottky-like potential barrier at the interface driven by charge transfer.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available