Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume 43, Issue 3B, Pages L407-L410Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.43.L407
Keywords
InN; bandgap; GW calculation
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The experimentally reported bandgap of wurtzite-type InN dramatically decreased from 1.9 eV to 0.7-0.8 eV very recently. In this paper we report first-principles electronic band-structure calculations of InN by using the all-electron full-potential linearized augmented-plane-wave (FLAPW) method in both local-density approximation (LDA) and GW approximation (GWA), and provide the reliable theoretical bandgap of InN. Our calculation suggests that InN is a narrow-gap semiconductor and strongly supports the recently reported smaller bandgaps. Moreover, we reproduce the bandgap change of Ga1-xInxN ternary alloys as a function of In content x. The present work supports the possibility of bandgap control in the entire range of visible light, using nitrides alone.
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