Low-temperature growth well-aligned β-Ga2O3 nanowires from a single-source organometallic precursor

The growth of well-aligned Ga2O3 nanowires at low temperature (550degreesC) is reported (see Figure). A single-source precursor of gallium acetylacetonate is employed as the reactant for the growth of the nanowires by a vapor-liquid-solid route. Structural characterization by X-ray diffraction and transmission electron microscopy reveals that the nanowires are preferentially oriented in the ((2) over bar 01) direction.