Terahertz emission. by plasma waves in 60 nm gate high electron mobility transistors

We report on the resonant, voltage tunable emission of terahertz, radiation (0.4-1.0 THz) from a gated two; dimensional electron gas in a 60 nm InGaAs high electron mobility transistor. The emission is interpreted as resulting from a current driven plasma instability leading to oscillations in the transistor channel (Dyakonov-Shur instability). (C) 2004 American Institute of Physics.