Demonstration of a 256 x 256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors

We report a demonstration of an infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors. The middle-wavelength infrared.-quantum-dot infrared photodetector (QDIP) structure was. grown via low-pressure metal organic chemical vapor deposition. A detectivity of 3.6x10(10) cmHz(1/2)/W was achieved at T=95 and a bias of -1.4 V. The background limited temperature of our QDIP was 140 K with a 45degrees field of view. A 256x256 detector array was fabricated with dry etching; and hybridized to a Litton readout chip by indium bumps. Thermal imaging was achieved at temperatures up to 120 K. At T=77 K, the noise equivalent temperature difference was measured as 0.509 K with a 300 K background and f/2.3 optics. (C) 2004 American Institute of Physics.